SiC refers to silicon carbide. Silicon carbide (SiC) is made of quartz sand, coke and other raw materials through the high temperature furnace melting. The current industrial production of silicon carbide has two kinds, black silicon carbide and green silicon carbide. Both are hexagonal crystal, the specific gravity of 3.21g / cm3, micro hardness of 2840 ~ 3320kg / mm².

At least 70 kinds of crystalline silicon carbide, due to its low gravity 3.21g/cm3 and high temperature strength, it is suitable for bearings or high temperature furnace raw materials, at any pressure can not be reached, and have a considerable low chemical activity.

At the same time, many people have tried to replace silicon with silicon carbide due to their high thermal conductivity, high crush electric field strength and high maximum current density. Recently, in the application of semiconductor high power components. In fact, the silicon carbide substrate in thermal conductivity, more than 10 times higher than the sapphire substrate, so the use of silicon carbide substrate LED components, with good conductivity and thermal conductivity, relatively conducive to the production of high-power LED.